Infineon BSC097N06NSATMA1: 100V OptiMOS™ Power MOSFET for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives the need for advanced semiconductor components. At the forefront of this innovation is Infineon Technologies with its BSC097N06NSATMA1, a 100V N-channel OptiMOS™ power MOSFET engineered to excel in demanding switching applications. This device encapsulates the latest advancements in MOSFET technology, offering designers a superior combination of low switching losses and minimal on-state resistance.

A key highlight of the BSC097N06NSATMA1 is its exceptionally low typical on-state resistance (R DS(on)) of just 9.7 mΩ. This ultra-low resistance is critical for minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation. The ability to handle significant current with minimal voltage drop makes this MOSFET an ideal choice for high-current paths in circuits such as motor drives and power supplies.

Furthermore, the device is optimized for fast switching performance. The low gate charge (Q G) and figure of merit (FOM) ensure that transitions between on and off states are both rapid and smooth. This characteristic is paramount in high-frequency switch-mode power supplies (SMPS), DC-DC converters, and Class D audio amplifiers, where reduced switching losses allow for higher operating frequencies without a punitive efficiency penalty. This, in turn, enables the design of smaller, more compact magnetic components and filters.

The BSC097N06NSATMA1 is housed in a space-saving SuperSO8 package, which offers an excellent balance between thermal performance and board space utilization. Its high power density makes it suitable for space-constrained applications across automotive, industrial, and consumer domains. Notably, its 100V drain-to-source voltage rating provides a comfortable design margin in 48V systems, enhancing overall system robustness and reliability.

ICGOOODFIND: The Infineon BSC097N06NSATMA1 stands out as a top-tier solution for engineers focused on maximizing efficiency and power density. Its winning combination of ultra-low R DS(on), exceptional switching characteristics, and a thermally efficient package makes it a versatile and highly reliable component for the most demanding power management tasks.

Keywords: OptiMOS™, Low R DS(on), High-Efficiency Switching, SuperSO8 Package, Power Density.