Infineon IPD65R650CEAUST1: 650V CoolMOS™ Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronic systems demands continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon's IPD65R650CEAUMA1, a 650V superjunction MOSFET from the renowned CoolMOS™ CE family. This transistor is engineered to set new benchmarks in performance for a wide array of high-efficiency applications, from server and telecom SMPS to industrial motor drives and renewable energy systems.

A defining characteristic of the IPD65R650CEAUMA1 is its exceptionally low figure-of-merit (R DS(on) x Q G). With a maximum on-state resistance of just 65 mΩ and optimized gate charge, the device achieves an outstanding balance between conduction and switching losses. This translates directly into higher system efficiency, as reduced energy losses minimize heat generation, allowing for smaller heatsinks or even passive cooling in some designs. The result is a significant boost in overall power density, enabling designers to create more compact and lighter end products without compromising performance or reliability.

The superjunction technology underpinning the CoolMOS™ CE series is central to its success. This advanced architecture allows the transistor to handle high voltages while maintaining a very low specific on-resistance. Furthermore, the device features integrated fast body diode with excellent reverse recovery characteristics. This hardens the switch against rugged operating conditions and is particularly beneficial in phase-shifted full-bridge or LLC resonant converters, where the body diode's behavior is critical for stable and efficient operation.

Beyond raw electrical performance, the IPD65R650CEAUMA1 is designed for robustness and ease of use. Its low gate charge simplifies drive circuit design, reducing the demands on the gate driver IC. The product is also AEC-Q101 qualified, making it a robust and reliable choice not only for industrial and computing applications but also for demanding automotive scenarios. Its TOLL (TO-Leadless) package offers a compact footprint with superior thermal performance due to a large exposed cooling pad, facilitating efficient heat dissipation from the bottom of the package.

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The Infineon IPD65R650CEAUMA1 CoolMOS™ transistor stands as a superior solution for engineers pushing the limits of efficiency and power density. By masterfully combining ultra-low switching and conduction losses with high robustness in a thermally efficient package, it provides a critical enabling technology for the next generation of high-performance power supplies, inverters, and motor control systems.

Keywords:

1. High-Efficiency

2. CoolMOS™

3. Superjunction MOSFET

4. Low RDS(on)

5. Power Density