onsemi NTTFS5116PLTAG P-Channel Power MOSFET: Datasheet, Application Circuit, and Replacement Part Guide

The onsemi NTTFS5116PLTAG is a robust P-Channel Power MOSFET utilizing TrenchFET® generation 5 technology, designed to deliver exceptional performance in power management applications. This device is engineered for low gate charge and low on-resistance, making it an ideal choice for high-efficiency power switching in a compact package.

Key Datasheet Specifications and Features

A deep dive into the datasheet reveals the critical parameters that define this component. It boasts a drain-source voltage (Vds) of -30 V and a continuous drain current (Id) of -11.5 A at 25°C. Its most notable feature is an extremely low on-resistance (Rds(on)) of just 9.3 mΩ at a gate-source voltage of -10 V. This low Rds(on) directly translates to reduced conduction losses and higher overall system efficiency. The device is housed in a Power33 package, which offers an excellent footprint-to-performance ratio, making it suitable for space-constrained applications like load switching, battery management, and power distribution in portable devices.

Typical Application Circuit

A common application for the NTTFS5116PLTAG is as a high-side load switch. In this configuration, the source is connected to the power rail (e.g., a battery), the drain to the load, and the gate is controlled by a logic-level signal through a series resistor. A pull-up resistor is often used to ensure the MOSFET remains off when the control signal is floating. For switching inductive loads, a protection diode (often a body diode within the MOSFET itself) is crucial to clamp any negative voltage spikes and protect the circuit. The circuit's simplicity and the MOSFET's low gate drive requirements allow for easy integration with microcontrollers and other logic circuits.

Replacement Part Guide

When the NTTFS5116PLTAG is unavailable, selecting a suitable replacement requires careful cross-referencing of key parameters. Potential alternatives must match or exceed the following:

Voltage and Current Ratings: Vds should be -30V or higher, and Id should be -11.5A or higher.

On-Resistance (Rds(on)): A value of 9.3 mΩ or lower is critical to maintain efficiency.

Package Type: The Power33 (or similar compact power packages like SuperSO8, LFPAK) is necessary for PCB layout compatibility.

Suitable potential replacements from other manufacturers could include:

Infineon IRF7416QTRPBF

Vishay SiS416DNT-T1-GE3

Diodes Incorporated DMP2150LDM-13

It is essential to consult the respective datasheets to verify pin-to-pin compatibility and performance characteristics under your specific operating conditions before finalizing a substitution.

ICGOODFIND: The onsemi NTTFS5116PLTAG stands out as a high-performance P-Channel MOSFET, offering an optimal balance of low on-resistance, compact packaging, and high current handling. Its primary application is in efficient power switching and load control. When seeking a replacement, meticulous attention to electrical characteristics and package compatibility is paramount for ensuring system reliability and performance.

Keywords: P-Channel MOSFET, Low On-Resistance, Load Switch, Power33 Package, Battery Management.