Infineon IKW15T120: A High-Performance TRENCHSTOP™ IGBT for Advanced Power Switching Applications
The relentless pursuit of efficiency, power density, and reliability in power electronics drives the continuous innovation in semiconductor technology. At the forefront of this evolution is the Infineon IKW15T120, a robust 1200 V, 15 A TRENCHSTOP™ IGBT that sets a benchmark for high-performance power switching.
Engineered for demanding applications, this IGBT leverages Infineon's advanced TRENCHSTOP™ technology. This proprietary cell design significantly enhances performance by optimizing the trade-off between low saturation voltage (VCE(sat)) and low switching losses. The result is a device that operates with exceptional efficiency, generating less heat and enabling higher switching frequencies. This allows designers to reduce the size of magnetic components and heat sinks, leading to more compact and cost-effective system designs.
The IKW15T120 is particularly suited for a wide array of advanced power conversion systems. It excels in applications such as:
Solar inverters and UPS systems, where high efficiency is critical for maximizing energy harvest and backup time.
Industrial motor drives and welding equipment, demanding robust performance and high short-circuit ruggedness.
Switched-Mode Power Supplies (SMPS) for servers and telecom infrastructure, requiring high power density and reliability.
A key feature of this device is its co-packaged ultra-soft recovery EmCon™ diode. This intelligent integration simplifies circuit design, improves system reliability, and minimizes electromagnetic interference (EMI) by effectively controlling reverse recovery currents. The combination of the high-speed IGBT and this optimized diode ensures smooth and efficient operation in hard-switching topologies like boost, bridge, and resonant circuits.
Furthermore, the module offers excellent controllability and is designed for ease of use. Its positive temperature coefficient of VCE(sat) facilitates straightforward parallel operation for higher current capabilities. The ruggedness and built-in protection features ensure stable operation even under extreme conditions, providing designers with a dependable component for mission-critical applications.
ICGOOFIND: The Infineon IKW15T120 stands as a superior solution for engineers pushing the boundaries of power electronics. Its blend of high efficiency, low switching losses, and integrated diode makes it an indispensable component for designing the next generation of advanced, compact, and highly efficient power switching systems.
Keywords: TRENCHSTOP™ IGBT, High-Efficiency Switching, Power Semiconductors, EmCon™ Diode, Power Density.
