Infineon IPLU300N04S4-R7: High-Performance OptiMOS 4 Power MOSFET for Automotive and Industrial Applications
The relentless drive for higher efficiency, power density, and reliability in power electronics is a defining challenge for designers in the automotive and industrial sectors. Addressing these demands head-on, Infineon Technologies has developed the IPLU300N04S4-R7, a benchmark N-channel power MOSFET that exemplifies the superior performance of the OptiMOS 4 40V technology. This device is engineered to set new standards in switching performance and operational robustness.
At the core of this MOSFET's exceptional performance is its extremely low typical gate charge (Qg) and outstandingly low typical reverse recovery charge (Qrr). These parameters are critical for high-frequency switching applications, as they directly determine switching losses. The reduced Qrr is particularly beneficial in minimizing losses in hard-switching topologies and improving the overall efficiency of synchronous rectification circuits. This allows systems to operate at higher frequencies, enabling the use of smaller passive components like inductors and capacitors, which in turn leads to a significant increase in power density.
The device boasts a maximum RDS(on) of just 0.3 mΩ at 10 V, which is among the lowest in its class. This ultra-low on-state resistance is paramount for minimizing conduction losses, a primary source of heat generation in power systems. By drastically reducing these losses, the IPLU300N04S4-R7 enables higher efficiency operation, leading to cooler running temperatures, reduced cooling requirements, and enhanced long-term system reliability. This makes it an ideal solution for demanding applications such as:
Automotive: High-power DC-DC converters in electric and hybrid vehicles, motor control systems, and load switches.
Industrial: Power supplies for servers and telecom equipment, motor drives, and solar inverters.
Furthermore, the component is housed in an SuperSO8 package (PG-TSON-8), which offers an excellent footprint-to-performance ratio. This package provides superior thermal characteristics compared to standard SO-8 packages, ensuring efficient heat dissipation from the die. Its AEC-Q101 qualification guarantees that it meets the stringent quality and reliability standards required for automotive applications, providing designers with the confidence to deploy it in mission-critical systems.
ICGOOODFIND: The Infineon IPLU300N04S4-R7 is a top-tier power MOSFET that delivers a winning combination of ultra-low RDS(on), minimal switching losses, and high power density. Its robustness and automotive qualification make it a premier choice for engineers designing next-generation, high-efficiency power systems in both automotive and industrial fields.
Keywords: OptiMOS 4, Low RDS(on), High Power Density, Automotive Grade (AEC-Q101), Low Gate Charge (Qg)
